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| Variable Capacitance Diodes MA2ZV01 Silicon epitaxial planar type Unit : mm For VCO INDICATES CATHODE 0.4 0.15 * Good linearity and large capacitance-ratio in CD VR relation * Small series resistance rD * S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1 2 0.4 0.15 1.7 0.1 2.5 0.2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 -55 to +150 Unit V C C 0.9 0.1 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 7X I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(3V) Capacitance ratio Series resistance* CD(1V)/CD(3V) rD CD = 9 pF, f = 470 MHz VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz 15.0 5.0 2.2 1.0 Conditions Min Typ Max 10 17.0 7.0 Unit nA pF pF Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 - 0.06 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.3 - 0.05 + 0.1 1.25 0.1 I Features 1 MA2ZV01 IF V F 120 25C Variable Capacitance Diodes CD VR 100 f = 1 MHz Ta = 25C 100 VR = 6 V IR Ta 100 50 Diode capacitance CD (pF) Forward current IF (mA) 80 Ta = 60C - 40C 30 20 60 10 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 1 40 5 3 2 0.1 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperatureTa (C) CD Ta 1.04 f = 1 MHz VR = 1 V 3V 1.03 CD(Ta) CD(Ta = 25C) 1.02 1.01 1.00 0.99 0.98 0 20 40 60 80 100 Ambient temperature Ta (C) 2 |
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